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NIIN As an Ohmic Contact to P-GAN

Published online by Cambridge University Press:  15 February 2011

D. B. Ingerly ,
Y. A. Chang  and
Y. Chen
D. B. Ingerly
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706-1595
Y. A. Chang
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706-1595
Y. Chen
Affiliation:
Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304-1392
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Abstract

Based on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound Niln as a possible ohmic contact. The contacts were fabricated by depositing Niln on p-GaN films (p ∼ 2 × 1017 cm-3) using RF sputtering from a compound target. The as-deposited, Niun contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealed at 800°C for I min yielding the lowest resistance. When annealed at 800°C for 1 min Niln contacts exhibited a specific contact resistance of 8-9 × 10-3 Ωcm2, as measured by the circular transmission line model. To allow a more universal comparison the more traditional Ni/Au contacts, processed under the same conditions, were used as a standard. Their measured specific contact resistance (ρc = 1.2 - 2.1 x 10-2 Ωcm2) was significantly higher than that of the Niln contacts. Demonstrating that Niln has promise as an ohmic contact to p-GaN and should be studied in greater detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.49
Copyright
Copyright © Materials Research Society 1999

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