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NiSi formation in the Ni(Ti) /SiO 2 /Si System

Published online by Cambridge University Press:  01 February 2011

R.T.P. Lee ,
D.Z. Chi  and
S.J. Chua
R.T.P. Lee
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore117602.
D.Z. Chi
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore117602.
S.J. Chua
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore117602.
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Abstract

A NiSi silicide process employing a Ni(Ti) alloy has been investigated. It was experimentally demonstrated that a small amount of Ti in Ni could overcome the reaction-inhibiting effect of an interfacial oxide layer on Si. Ti in the deposited Nil film reacts with the interfacial oxide, yielding an altered oxide layer, which acts as a Ni-permeable diffusion membrane during silicidation. Good diode characteristics were obtained from p+/n silicided Ni(Ti)-diodes with an initial interfacial oxide. It is believed that the ability to form silicide effectively in the presence of a native oxide will greatly relieve constraints on processing conditions and significantly enhance manufacturing yield.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D7.8
Copyright
Copyright © Materials Research Society 2003

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References

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