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N-K-Edge EXAFS Study of Epitaxial GaN Films

Published online by Cambridge University Press:  10 February 2011

M. Katsikini ,
E. C. Paloura ,
M. Fieber-Erdmann ,
T. D. Moustakas ,
H. Amano  and
I. Akasaki
M. Katsikini
Affiliation:
Aristotle Univ. of Thessaloniki, Dept. of Physics, 54006 Thessaloniki, Greece. Hahn-Meitner Institute (A. S), Glienicker Str. 100, D-14109 Berlin, Germany
E. C. Paloura
Affiliation:
Aristotle Univ. of Thessaloniki, Dept. of Physics, 54006 Thessaloniki, Greece.
M. Fieber-Erdmann
Affiliation:
Hahn-Meitner Institute (A. S), Glienicker Str. 100, D-14109 Berlin, Germany
T. D. Moustakas
Affiliation:
Boston University, College of Engineering, Boston, MA 02215, USA.
H. Amano
Affiliation:
Meijo University, Dept. of Electrical & Electronic Engineering, Nagoya 468, Japan.
I. Akasaki
Affiliation:
Meijo University, Dept. of Electrical & Electronic Engineering, Nagoya 468, Japan.
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Abstract

X-ray absorption measurements at the N and O-K-edges are used to study the local microstructure in cubic and hexagonal GaN films grown by ECR-MBE and HVPE. A distortion in the local microstructure is identified in the 1st nearest neighbor (nn) shell, consisting of Ga atoms, in both the cubic and hexagonal samples. Two N-Ga distances are identified, R1 and R2, where R1 is the expected distance of 1.95Å while R2=R1+0.25Å. The same distortion is detected in the next nn shell containing Ga atoms, where the two distances are 3.7Å and 4.1Å. All the reported distance variations are larger than the error-bar. The nitrogen 2nd nn neighbor is found at the expected distance of 3.12Å while N deficiency is not detected. Finally, the O-Ga distance is found equal to 1.60Å and therefore it can be proposed that the oxygen atom occupies interstitial positions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 459
Copyright
Copyright © Materials Research Society 1997

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References

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