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NMR Detection of New Hydrogen Populations in Amorphous and Crystalline Silicon

Published online by Cambridge University Press:  10 February 2011

R. Borzi
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
T. S. Cull
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
P. A. Fedders
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
D. J. Leopold
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
R. E. Norberg
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, ren@howdy.wustl.edu
J. B. Boyce
Affiliation:
Xerox PARC, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox PARC, Palo Alto, CA 94304
S. E. Ready
Affiliation:
Xerox PARC, Palo Alto, CA 94304
J. Walker
Affiliation:
Xerox PARC, Palo Alto, CA 94304
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Abstract

Deuteron magnetic resonance (DMR) has been used to further examine hydrogen (deuteron) populations in amorphous-silicon (a-Si) and in n-type crystalline silicon (x-Si). In both a-Si and x-Si DMR shows central components arising at least in part from isolated molecular deuterium and sharp doublet features from Si-bonded hydrogen (D). Our new results include the observation in x-Si of molecule-specific DMR multiple echoes from trapped ortho-D2. A second new result is the observation in x-Si of a substantialn Si-bonded D population with splittings between 46 and 80 kHz and perhaps arising from (deuterated) hydrogen bond-centered and antibonding configurations.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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