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A Novel Method for Study of Roughness at Buried Interfaces by Plan View Tem: Si/SiO2

Published online by Cambridge University Press:  25 February 2011

J. M. Gibson  and
M. Y. Lanzerotti
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M. Y. Lanzerotti
Affiliation:
Dunster House, Harvard University, Cambridge, MA 02139
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Abstract

Interfacial roughness can be measured at buried interfaces using plan view transmission electron diffraction. The method relies on surface termination Bragg reflections and is applied to the Si/SiO2 system. In contrast to other methods, this does not require stripping of the SiO2 overlayer or projection assumptions. We find that thermal oxide interfaces are significantly flatter than previously supposed.

The Si/SiO2 interface has been extensively examined by a wide variety of techniques. A subset of these studies have focussed on the interfacial roughness and it has been shown that increased step density reduces electron mobility.[1, 2 ] Although supporting the correlation of mobility with step density, the data presented here shows thermally oxidized Si/SiO2 interfaces to be significantly flatter than previously assumed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 355
Copyright
Copyright © Materials Research Society 1989

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References

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