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Novel Mid-Infrared Lasers with Compressively Strained InAsSb Active Regions

Published online by Cambridge University Press:  10 February 2011

S. R. Kurtz ,
R. M. Biefeld  and
A. A. Allerman
S. R. Kurtz
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
R. M. Biefeld
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
A. A. Allerman
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
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Abstract

Mid-infrared lasers grown by MOCVD with ALAsSb claddings and strained InAsSb active regions are reported. A 3.8–3.9 μm injection laser with a pseudomorphic InAsSb multiple quantum well active region lased at 210 K under pulsed operation. A semi-metal layer acts as an internal electron source for the injection laser. An optically pumped laser with an InAsSb/InAsP strained-layer superlattice active region was demonstrated at 3.7 μm, 240 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 23
Copyright
Copyright © Materials Research Society 1997

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References

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