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N-rich GaNAs with High As Content Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Akitaka Kimura ,
H. F. Tang ,
C. A. Paulson  and
T. F. Kuech
Akitaka Kimura
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
H. F. Tang
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
C. A. Paulson
Affiliation:
Department of Electrical and Computer Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
T. F. Kuech
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
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Abstract

GaN1-yAsy epitaxial alloys on the N-rich side with high As content were grown by metalorganic vapor phase epitaxy. They had specular surfaces and the single-phase epitaxial nature was confirmed by X-ray diffraction. The As incorporation increased through both a decrease in the growth temperature and V/III ratio. These trends were similar to that found in other III-V alloy systems which exhibit a large miscibility gap and the anion incorporation was considered to have been limited kinetically under the conditions of the low V/III ratio. The range of achieved As content was extended up to y=0.067, which is a composition well within the miscibility gap. The As-content dependence of the band gap energy was determined by optical absorption measurements and large bowing parameter of 16.8 ± 0.9 eV was determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.10
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Kondow, M., Uomi, K., Niwa, A., and Kitatani, T., Jpn. J. Appl. Phys. 35, 1273 (1996).Google Scholar
[2] Sakai, S., Ueta, Y., and Terauchi, Y., Jpn. J. Appl. Phys. 32, 4413 (1993).Google Scholar
[3] Neugebauer, J. and Van de Walle, C. G., Phys. Rev. B 51, 10568 (1995).Google Scholar
[4] Novikov, S. V., Winser, A. J., Bell, A., Harrison, I, Li, T., Campion, R. P., Staddon, C. R., Davis, C. S., Ponce, F. A., and Foxon, C. T., J. Cryst. Growth 240, 423 (2002).Google Scholar
[5] Gherasimova, M., Gaffey, B., Mitev, P., Guido, L. J., Chang, K. L., Hsieh, K. C., Mitha, S., and Spear, J., MRS Internet J. Nitride Semicond. Res. 4S1, G3.44 (1999).Google Scholar
[6] Iwata, K., Asahi, H., Asami, K., Kuroiwa, R., and Gonda, S., Jpn. J. Appl. Phys. 37, 1436 (1998).Google Scholar
[7] Larsen, C. A., Buchan, N. I., Li, S. H., and Stringfellow, G. B., J. Cryst. Growth 94, 663 (1989).Google Scholar
[8] Ban, V. S., J. Electrochem. Soc. 119, 761 (1972).Google Scholar
[9] Liu, S. S. and Stevenson, D. A., J. Electrochem. Soc. 125, 1161 (1978).Google Scholar
[10] Mesrine, M., Grandjean, N., and Massies, J., Appl. Phys. Lett. 72, 350 (1998).Google Scholar
[11] Cherng, M. J., Stringfellow, G. B. and Cohen, R. M., Appl. Phys. Lett. 44, 677 (1984).Google Scholar
[12] Hishikawa, Y., Nakamura, N., Tsuda, S., Nakano, S., Kishi, Y., and Kuwano, Y., Jpn. J. Appl. Phys. 30, 1008 (1991).Google Scholar