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Nucleation and Growth Mechanisms in Hetero-Epitaxial Films

Published online by Cambridge University Press:  28 February 2011

J.A. Venables ,
J.S. Drucker ,
M. Krishnamurthy ,
G. Raynerd  and
T. Doust
J.A. Venables
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNl 90H, England
J.S. Drucker
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
M. Krishnamurthy
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
G. Raynerd
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNl 90H, England
T. Doust
Affiliation:
School of Mathematical and Physical Sciences, University of Sussex, Brighton BNl 90H, England
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Abstract

Nucleation and growth mechanisms in the formation of heteroepitaxial films are reviewed. The various processes can be incorporated into rate equations to model the number density and size distribution of clusters.Recent work on extensions of this approach to include the effect of surface steps and other surface imperfections is highlighted.

The most important processes are being studied experimentally using a combination of surface-analytic and -microscopic techniques, based on SEM and STEM instrumentation. Recent examples are given in which nucleation densities, surface diffusion lengths and the effects of steps have been studied in the systems Ag/Si(lll) and Ge/Si(100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 93
Copyright
Copyright © Materials Research Society 1990

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References

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