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On the Electronic Properties of Silicon-Tellurium Films

Published online by Cambridge University Press:  28 February 2011

F.A. Faris ,
A. Al-Jassar ,
F.G. Wakim  and
K.Z. Botros
F.A. Faris
Affiliation:
Physics Department, Faculty of Science Kuwait University, P.O. Box 5969, Kuwait
A. Al-Jassar
Affiliation:
Physics Department, Faculty of Science Kuwait University, P.O. Box 5969, Kuwait
F.G. Wakim
Affiliation:
Physics Department, Faculty of Science Kuwait University, P.O. Box 5969, Kuwait
K.Z. Botros
Affiliation:
Physics Department, Faculty of Science Kuwait University, P.O. Box 5969, Kuwait
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Abstract

Silicon and Silicon-Tellurium films were prepared in an ultrahigh vacuum system. The d.c. electrical conductivity of these films were measured under vacuum before exposing them to the air. The thermal activation energies of Silicon-Tellurium films were always found to be greater than that of Silicon films. Furthermore the optical measurements on Silicon-Tellurium films indicated that the optical gap of these films decreases as the concentration of tellurium in the films increases. Electron microscope examinations revealed that the films were amorphous in structure and homogeneous in composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 225
Copyright
Copyright © Materials Research Society 1985

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References

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