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On the Interaction of Intrinsic and Extrinsic Gettering Schemes in Silicon

Published online by Cambridge University Press:  21 February 2011

K. H. Yang  and
T. Y. Tan
K. H. Yang
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533
T. Y. Tan
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We report some results of an experiment designed to study the interaction of extrinsic-gettering (EG) and intrinsic-gettering (IG) schemes. We found that mechanical abrasion introduces interstitial type dislocations into the wafer backside, and produces a concave wafer frontside. The EG dislocation network enhances SiO2 precipitation which is responsible for the IG activity. The enhancement is most significant near the wafer backside. The interaction arises most probably because the dislocation network serves as a very efficient source/sink for point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 223
Copyright
Copyright © Materials Research Society 1985

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References

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