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On the Interface Properties and Deep Level Defects in Ta2O5 Grown on Si by Plasma Enhanced Liquid Source-Cvd

Published online by Cambridge University Press:  21 February 2011

P.A. Murawala ,
N. Sawai ,
T. Tatsuta ,
O. Tsuji ,
Sz. Fujita  and
Sg. Fujita
P.A. Murawala
Affiliation:
Research & Development Center, Samco International Incorporated 33, Tanakamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
N. Sawai
Affiliation:
Research & Development Center, Samco International Incorporated 33, Tanakamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
T. Tatsuta
Affiliation:
Research & Development Center, Samco International Incorporated 33, Tanakamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
O. Tsuji
Affiliation:
Research & Development Center, Samco International Incorporated 33, Tanakamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
Sz. Fujita
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
Sg. Fujita
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
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Abstract

We report, for the first time, on interface properties of the Ta2O5-Si system and on the deep level defects in Ta2O5 grown by plasma enhanced liquid source chemical vapor deposition (PE-LS-CVD) using Ta(OC2Hs)5. The capacitance voltage (C–V) measurement performed on Au/Ta2O5/n, p-Si MOS diodes resulted in very well defined C-V charactristics which compares well with the ideal C-V curve. The flat band voltage is as low as 0.15 V and the minimum density of the interface state is about 2.7 × 1011 cm−2 ev−1. In order to examine deep level defects in Ta2O5, we investigated variations of flat band voltage under application of high stress electric field (10MV/cm), by which hot carriers are injected in to deep levels. This charge transfer process results in increase of charges in Ta2O5 oxide which is attributed to the equivalent deep level defect densities, which is found to be of the order of 2 × 1011 cm−2 in the Ta2O5-Si system. These results strongly suggest low interface states and deep levels in the PE-LS-CVD grown Ta2O5-Si system, which may be brought about by low decomposed-carbon impurities in the film, confirmed by AES in our previous reports. These films can play a vital role as thin capacitors in I.C. technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 15
Copyright
Copyright © Materials Research Society 1993

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References

1. Murawala, P.A., Sawai, M., Tatsuta, T., Tsuji, O., Fujita, Sz. and Fujita, Sg.: Materials Research Society Symposium Proceedings Vol. 265: Materials Reliability in Microelectronics II, (Materials Research Society, Pittsburgh, Pennsylvania, USA, 1992) p. 319.Google Scholar
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