Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T19:39:58.742Z Has data issue: false hasContentIssue false
  • English
  • Français

On the Role of the Staebler-WronSki Susceptibility in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

D. Caputo ,
G. De Cesare ,
G. Irrera ,
G. Masini ,
F. Palma ,
M. C. Rossi ,
G. Conte ,
G. Nobile  and
E. Terzini
D. Caputo
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. De Cesare
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. Irrera
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. Masini
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
F. Palma
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
M. C. Rossi
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. Conte
Affiliation:
ENEA, Centra Ricerche Fotovoltaiche, P.O. Box 32 , 80055 Portici (Napoli), ITALY
G. Nobile
Affiliation:
ENEA, Centra Ricerche Fotovoltaiche, P.O. Box 32 , 80055 Portici (Napoli), ITALY
E. Terzini
Affiliation:
ENEA, Centra Ricerche Fotovoltaiche, P.O. Box 32 , 80055 Portici (Napoli), ITALY
Get access

Abstract

Photoconductivity decay during monochromatic illumination has been measured on an ensemble of a-Si:H films deposited at different substrate temperatures. Degradation behaviour has been modelled within the framework of the bond-breaking model (dN/dt = Csw np). Simmons and Taylor recombination kinetics has been assumed, taking into account the divalent nature of dangling bonds and their three possible conditions of occupancy. The Staebler-Wronski susceptibility (Csw) has been extracted through a fitting procedure. As a result, a correlation between the obtained Csw and the measured electronic, optical and structural properties of as deposited a-Si:H films can be inferred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 583
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Park, H. R., Liu, J. Z., Cabarros, P.Roca i, Maruyama, A., Isomura, M., Wagner, S., Abelson, J. R. and Finger, F., Appl. Phys. Lett. 57, 1440 (1990).Google Scholar
2. Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B32, 23 (1985).Google Scholar
3. Street, R. A., Physica B170, 69 (1991).Google Scholar
4. Schumm, G. and Bauer, G. H., J. Non-Cryst. Solids 137&138, 315 (1991)Google Scholar
5. Carlson, D. E., Appl. Phys. A 41, 305 (1986).Google Scholar
6. Shirafuji, J., Kuwagaki, M. and Nagata, S., J. Non-Cryst. Solids 72, 199 (1985).Google Scholar
7. Street, R. A., Philos. Mag. B 49, L15 (1984).Google Scholar
8. Hack, M., Guha, S. and Shur, M., Phys. Rev. B30, 6991 (1984)Google Scholar
9. Danesh, P., Pantchev, B., Savatinova, I., Liarokapis, E. and Raptis, Y. S., J. Appl. Phys. 69, 7656 (1991) and references therein.Google Scholar
10. Bhattacharya, E. and Mahan, A. H., Appl. Phys. Lett. 52, 1587 (1988).Google Scholar
11. Morigaki, K., Jpn. J. Appl. Phys. 29, L1582 (1990).Google Scholar