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Optical Absorption of Deep Defects in Neutron Irradiated Semi-Insulating GaAs.

Published online by Cambridge University Press:  25 February 2011

M. O. Manasreh  and
P. J. Pearah
M. O. Manasreh
Affiliation:
Electronic Technology Laboratory (WRDC/ELRA), Wright Research and Development Center, Wright-Patterson Air Force Base, Ohio 45433-6543
P. J. Pearah
Affiliation:
Spectrum Technology Incorporated, 6 October Hill Drive, Hollison, MA 01746.
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Abstract

Two defects were observed in thermal neutron irradiated semi-insulating liquid-encapsulated Czochralski (LEC) GaAs materials by using the infrared absorption technique. The first defect was observed before thermal annealing and it has a broad peak at ~0.83 eV. The second defect was observed after annealing the sample at 250 °C for 15 min. The latter defect is an EL2 - like defect, but is thermally unstable at 400 °C with a concentration of about an order of magnitude larger than [EL2] observed in as grown LEC materials. Both defects were found to photoquench with white light or 1.1 eV monochromatic light at 9 K and thermally recovered at 150 K. The concentration of the EL2 - like defect is reduced from 8.5×1016cm3 after annealing the sample at 300 °C for 15 min to 2×1016cm-3 after annealing at 400 °C for 15 min. This defect becomes unquenchable after the latter annealing conditions. An explanation for this behavior is offered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 175
Copyright
Copyright © Materials Research Society 1990

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