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Optical and electrical study of cap layer effect in QHE devices with double-2DEG

Published online by Cambridge University Press:  19 November 2013

L. Zamora-Peredo ,
I. Cortes-Mestizo ,
L. García-Gonzáez ,
J. Hernández-Torres ,
T. Hernandez-Quiroz ,
M. Peres-Caro ,
M. Ramirez-López ,
I. Martinez-Veliz ,
Y. L. Casallas-Moreno  and
S. Gallardo-Hernández
...Show all authors
L. Zamora-Peredo*
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
I. Cortes-Mestizo
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
L. García-Gonzáez
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
J. Hernández-Torres
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
T. Hernandez-Quiroz
Affiliation:
Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, Calzada Adolfo Ruiz Cortines # 455, Fracc. Costa Verde, C.P. 94292, Boca del Río, Veracruz, México.
M. Peres-Caro
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
M. Ramirez-López
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
I. Martinez-Veliz
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
Y. L. Casallas-Moreno
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
S. Gallardo-Hernández
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
A. Conde-Gallardo
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
M. López-López
Affiliation:
Departamento de Física, Centro de Investigaciones y de Estudios Avanzados - IPN, México D. F., México
*
*Email: luiszamora@uv.mx
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Abstract

In this work we report on the characteristics of GaAs/AlGaAs heterostructures with a symmetric double two-dimensional electron gas (D-2DEG). Optical characterization was made by room temperature photoreflectance (PR) spectroscopy as well as electrical properties were determinated using the quantum Hall effect measurements at 2K. In order to study the surface effects on the conduction band profile, three samples with different GaAs cap layer thickness (25, 60 and 80 nm) were grown by the molecular beam epitaxy. Photoreflectance spectra at room temperature show the wide-period Franz-Keldysh oscillations between 1.42 and 1.70 eV originated by the surface electric field. The analysis of these oscillations shows that the surface electric field varies from 503 to 120 kV/cm whereas the thickness of the cap layer increases that was produced by the reduction of the depletion zone near the surface. Using QHE measurements we found that electron density increases if the surface electric field decreases.

Keywords

electrical propertiesGaAs/AlGaAsoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 31 - 36
Copyright
Copyright © Materials Research Society 2013 

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References

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