Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T20:24:40.610Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical and Electronic Properties of GaAs/AlAs Random Superlattices

Published online by Cambridge University Press:  22 February 2011

E.G. Wang ,
J.H. Xu ,
W.P. Su  and
C.S. Ting
E.G. Wang
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
J.H. Xu
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
W.P. Su
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204 Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
C.S. Ting
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
Get access

Abstract

The optical and electronic properties of three-dimensional (3D) random GaAs/AlAs superlattices (SLs) has been studied by using a tight-binding Hamiltonian with secondneighbor interactions. We calculate three completely disordered sequences with the probability of GaAs layers being 30%, 50%, and 70%. The higher the GaAs composition, the narrower the indirect gap. An energy-level crossing is found at the bottom of conduction band, which originates from the M-state splitting induced by layer disorder. The localized states over two - four monolayers play an important role in the absorption edge of random SL. The highest absorption intensity of the band-edge transitions in our random models is about eight times stronger than that of short period ordered GaAs/AlAs SL. Our results are in good agreement with some recent photoluminescence measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 481
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Chomette, A., Devesud, B., Regreny, A., and Bastard, G., Phys. Rev. Lett. 57, 1464 (1986).CrossRefGoogle Scholar
[2] Yamamoto, T., Kasu, M., Noda, S., and Sasaki, A., J. Appl. Phys. 68, 5318 (1990).CrossRefGoogle Scholar
[3] Strozier, J., Zhang, Y. A. Horton, C., Ignatiev, A., and Shih, H. D. Appl. Phys. Lett. 62, 3426(1993);W. P. Su and H. D. Shih J. Appl. Phys. 72, 2080 (1992).CrossRefGoogle Scholar
[4] Wang, E. G. Xu, J. H. Su, W. P. and Ting, C. S. Appl. Phys. Lett. 63, 1411 (1993).CrossRefGoogle Scholar
[5] Vogl, P., Hjalmarson, H. P. and Dow, J. D. J. Phys. Chem. Solids 44, 365 (1983).CrossRefGoogle Scholar
[6] Yamaguchi, E., J. Phys. Soc. Jpn. 56, 2835 (1987).CrossRefGoogle Scholar
[7] Newman, K. E. and Dow, J. D. Phys. Rev. B30, 1929 (1984).CrossRefGoogle Scholar
[8] Ge, Weikun, Sturge, M. D. Schmidt, W. D. Pfeiffer, L. N. and West, K. W. Appl. Phys. Lett. 57, 55 (1990).CrossRefGoogle Scholar
[9] Chang, Y. C. and Schulman, J. N. Phys. Rev. B31, 2069 (1985).CrossRefGoogle Scholar
[10] Xu, Zhizhong, Solid State Com. 75, 1143 (1990).CrossRefGoogle Scholar