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Optical Anisotropy of Er Centers in GaAs:Er,O

Published online by Cambridge University Press:  10 February 2011

R. A. Hogg ,
K. Takahei ,
A. Taguchi  and
Y. Horikoshi
R. A. Hogg
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
K. Takahei
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
A. Taguchi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
Y. Horikoshi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-01, Japan., hogg@will.brl.ntt.jp
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Abstract

For GaAs:Er,O the anisotropic photoluminescence (PL) properties of the Er-20 center and its preferential alignment within the GaAs matrix have been revealed by the polarization dependence of host-excited PL when detecting emission polarized along certain crystallographic directions. In the present paper, a polarized intra-4f-shell photoluminescence excitation (PLE) spectroscopic study of Er centers incorporated in GaAs is reported. This technique is not only sensitive to those centers which luminesce under host-excitation, but also to other Er centers incorporated in the host, thus allowing the polarized PL properties of most Er centers to be studied. A comparison of the polarization characterisitcs of host-excited PL and direct intra-4f-shell PLE, due to the difference in the excitation mechanisms, is made and the information which may be gained from such measurements is discussed. For the Er-20 center, we confirm the optical anisotropy and preferential alignment of the center previously observed in host-excited PL. Incorporation mechanisms for the Er-20 center which could result in the observed polarization dependence are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 167
Copyright
Copyright © Materials Research Society 1996

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