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Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10–10> Direction

Published online by Cambridge University Press:  10 February 2011

A. Andenet ,
B. Gil ,
Y.-M. Le Vaillant ,
S. Clur ,
O. Briot  and
R. L. Aulombard
A. Andenet
Affiliation:
CNRS-GES, Université de Montpellier II, -Case courrier 074 – 34095 Montpellier Cedex 5 France
B. Gil
Affiliation:
CNRS-GES, Université de Montpellier II, -Case courrier 074 – 34095 Montpellier Cedex 5 France
Y.-M. Le Vaillant
Affiliation:
CNRS-GES, Université de Montpellier II, -Case courrier 074 – 34095 Montpellier Cedex 5 France
S. Clur
Affiliation:
CNRS-GES, Université de Montpellier II, -Case courrier 074 – 34095 Montpellier Cedex 5 France
O. Briot
Affiliation:
CNRS-GES, Université de Montpellier II, -Case courrier 074 – 34095 Montpellier Cedex 5 France
R. L. Aulombard
Affiliation:
CNRS-GES, Université de Montpellier II, -Case courrier 074 – 34095 Montpellier Cedex 5 France
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Abstract

Group theory states that the spectroscopy of excitons in GaN epilayers grown with biaxial stress on M Plane (10–10)-oriented substrates is strongly anisotropie in the growth plane, in contrast to the situation if growth occurs on conventional C plane substrates. In addition, we predict existence of nine radiative transitions instead of five, three for each family of A, B, and C excitons. We calculate the in-plane anisotropy and show that, due to the crossed configuration of the wurtzite crystal field and the built-in strain one, the A exciton is significantly coupled to the electromagnetic field in π polarization (E//c).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 243
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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