Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-18T07:34:55.870Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical devices based on anisotropically nanostructured silicon

Published online by Cambridge University Press:  01 February 2011

J. Diener ,
N. Künzner ,
E. Gross ,
D. Kovalev  and
M. Fujii
J. Diener
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
N. Künzner
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
E. Gross
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
D. Kovalev
Affiliation:
Technische Universitäat München, Physik-Department E16, D-85747 Garching, Germany
M. Fujii
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657–8501, Japan
Get access

Abstract

Anisotropic nanostructuring of bulk silicon (Si) leads to a significant optical anisotropy of single porous silicon (PSi) layers. A variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three-dimensional variation of the refractive index (in plane an in depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization sensitive, silicon-based optical devices: retarders, dichroic Bragg Reflectors, dichroic microcavities and Si based polarizers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 797: Symposium W – Engineered Porosity for Microphotonics and Plasmonics , 2003 , W1.8
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Referenzes

[1] Schilling, J., Müller, F., Matthias, S., Wehrspohn, R.B., Gösele, U., and Busch, K., Appl. Phys. Lett. 78, 1180 (2001)Google Scholar
[2] Cullis, A. G., Canham, L. T. and Calcott, P. D. J., J. Appl. Phys. 82, 909 (1997)Google Scholar
[3] Künzner, N., Kovalev, D., Diener, J., Gross, E., Yu. Timoshenko, V., Polisski, G., Koch, F. and Fujii, M. Optics Letters 26, 1265 (2001)Google Scholar
[4] Kovalev, D., Polisski, G., Diener, J., Heckler, H., Künzner, N., Yu. Timoshenko, V., Koch, F., Appl. Phys. Lett. 78, 916 (2001)Google Scholar
[5] Kovalev, D., Polisski, G., Diener, J., Heckler, H., Künzner, N., Koch, F. Phys. Stat. Sol. (a) 180, r8–r11 (2000)Google Scholar
[6] Diener, J., Künzner, N., Kovalev, D., Gross, E., Yu. Timoshenko, V., Polisski, G. and Koch, F., Appl. Phys. Lett. 78, 3887 (2001)Google Scholar
[7] Diener, J., Künzner, N., Kovalev, D., Gross, E., Koch, F., J. of Appl. Phys. 91, 6704 (2002)Google Scholar
[8] Diener, J., Künzner, N., Gross, E., Kovalev, D., Fujii, M., Optics Letters accepted for publicationGoogle Scholar