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Optical Properties and Structure of Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

Hien V. Nguyen ,
Ilsin An ,
Youming Li ,
C.R. Wronski  and
R.W. Collins
Hien V. Nguyen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Ilsin An
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Youming Li
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
C.R. Wronski
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
R.W. Collins
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

The optical properties of thin film microcrystalline silicon (μc-Si:H) prepared by plasma-enhanced chemical vapor deposition (PECVD) have been studied by real time spectroscopie ellipsometry in the nucleation regime as isolated crystalline particles increase in size. A simple geometric model of nucleation allows us to remove the dominant effect of voids and extract the dielectric functions of the crystallites themselves. We find that the results can be understood in terms of a classical size effect whereby limitations on the electron mean free path by scattering at crystallite surfaces control the absorption onset from 2.0 to 3.0 eV. Finally, we describe how well-ordered, continuous 15 Å c-Si films can be prepared on metal substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 235
Copyright
Copyright © Materials Research Society 1992

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References

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