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The Optical Properties of InGaAs(P)/InP Under Group V Sublattice Two-phase Interdiffusion

Published online by Cambridge University Press:  10 February 2011

E. Herbert Li ,
Joseph Micallef  and
W. C. Shui
E. Herbert Li
Affiliation:
University of Hong Kong, Dept. of EEE, Pokfulam Road, Hong Kong, ehli@hkueee.hku.hk
Joseph Micallef
Affiliation:
University of Malta, Department of Microelectronics, Malta
W. C. Shui
Affiliation:
Hong Kong Baptist University, Department of Mathematics, Hong Kong.
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Abstract

Using the fundamental transition state, we will investigate the two phase interdiffusion of group V sublattice in a strained lattice matched InGaAs/InP quantum well (QW) structures. The model employs three parameters namely the diffusion coefficients in the barrier (Db)and in the well (Dw)and the concentration ratio (k) of the diffused species at the heterstructure. The QW model includes the effects of strain and the exciton. A pseudo time dependent calculation is also considered and results are fitted to the reported experimental data. These parameters which characterize the diffusion mechanism can be measure to form a better understanding of the interdiffsion process for group V sublattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 289
Copyright
Copyright © Materials Research Society 1996

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