Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T19:43:38.940Z Has data issue: false hasContentIssue false

Optical Properties of Sol-Gel (Pb,La)TiO3 Thin Films For Waveguide Application

Published online by Cambridge University Press:  21 February 2011

Byeong-Soo Bae
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology (KAIST), Kusong-dong 373-1, Yusong-gu, Taejon 305–701, Korea
Won-Jong Lee
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology (KAIST), Kusong-dong 373-1, Yusong-gu, Taejon 305–701, Korea
Kwang-Soo No
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology (KAIST), Kusong-dong 373-1, Yusong-gu, Taejon 305–701, Korea
Dae-Sung Yoon
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology (KAIST), Kusong-dong 373-1, Yusong-gu, Taejon 305–701, Korea
Sung-Uk Kim
Affiliation:
Department of Materials Science & Engineering, Korea Advanced Institute of Science & Technology (KAIST), Kusong-dong 373-1, Yusong-gu, Taejon 305–701, Korea
Get access

Abstract

Lead lanthanum titanate ((Pb1−x/100Lax)Ti1−x/400O3, x=10, 20, 28) sol-gel thin films were prepared on SiO2/Si and glass substrates using lanthanum nitrate as a La precursor. The effect of the processing conditions was investigated and the optical properties of the films were measured to obtain good films for waveguide applications. The perovskite crystalline phase is achieved regardless of the heating condition but the slower heating creates better quality films. La content in the film does not effect on the refractive index and transparency of the film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wood, V. E., Busch, J. R., Ramamurthi, S. D. and Swartz, S. L., J. Appl. Phys. 71 (9), 1992.Google Scholar
2. Haertling, G. H., Integrated Ferroelectrics 3, 207 (1993).Google Scholar
3. Adachi, H., J. Appl. Phys., 60 (2), 736, (1986).Google Scholar
4. Teowee, G., Ph. D. Thesis, The University of Arizona, 1992.Google Scholar
5. Higashino, H., Kawaguchi, T., Adachi, H., Makino, T. and Yamazaki, O., Jpn. J. Appl. Physics, 24–2, 284 (1985).Google Scholar
6. Vest, R.W. and Xu, J., Ferroelectrics, 93, 21 (1989).Google Scholar
7. Sun, P., Zhang, L. and Yao, X., in Proc. 8th IEEE Int. Symp. Appl. Ferroelectrics, edited by Liu, M., Safari, A., Kingon, A. and Haertling, G. (Greenville, SC, 1992), pp.432435.Google Scholar
8. Liu, Y., Ren, W., Qiu, J. H., Zhang, L. Y. and Yao, X., Ferroelectrics, 152, 195 (1993).Google Scholar
9. Meidong, L., Peiying, W., Churong, L., Guoan, W., Yunhua, R. and Yike, Z., Integrated Ferroelectrics, 5, 303 (1994)Google Scholar
10. Yi, G., Wu, Z. and Sayer, M., J. Appl. Phys. 64 (5), 2717 (1988).Google Scholar