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Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

Published online by Cambridge University Press:  15 February 2011

G. Auvert ,
D. Bensahel ,
A. Perio ,
F. Morin ,
G.A. Rozgonyi  and
V.T. Nguyen
G. Auvert
Affiliation:
Centre National d'Etudes des Télécommunications, CNS, 38240, Meylan, FRANCE
D. Bensahel
Affiliation:
Centre National d'Etudes des Télécommunications, CNS, 38240, Meylan, FRANCE
A. Perio
Affiliation:
Centre National d'Etudes des Télécommunications, CNS, 38240, Meylan, FRANCE
F. Morin
Affiliation:
Centre National d'Etudes des Télécommunications, CNS, 38240, Meylan, FRANCE
G.A. Rozgonyi
Affiliation:
Centre National d'Etudes des Télécommunications, CNS, 38240, Meylan, FRANCE
V.T. Nguyen
Affiliation:
Centre National d'Etudes des Télécommunications, CNS, 38240, Meylan, FRANCE
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Abstract

Explosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 535
Copyright
Copyright © Materials Research Society 1982

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References

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