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Optimization Of Technology And Design Parameters Of IGBT Using TWB

Published online by Cambridge University Press:  10 February 2011

B. Fatemizadehl  and
Y. Granik
B. Fatemizadehl
Affiliation:
Technology Modeling Associates, Inc., 595 Lawrence Exp., Sunnyvale, CA 94086, USA(408) 328–0930, (408) 3280940
Y. Granik
Affiliation:
Technology Modeling Associates, Inc., 595 Lawrence Exp., Sunnyvale, CA 94086, USA(408) 328–0930, (408) 3280940
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Abstract

This paper presents a methodology to optimize the design of different types of IGBT using TWB (TMA WorkBench). Using RSM (Response Surface Modeling) and DOE (Design of Experiment) in TWB we have developed a methodology, which can be applied to explore the impact of design modifications on the speed improvement and study the trade-off between speed, on-resistance, and breakdown voltage of IGBT. This method is a rapid and cost-effective approach for studying design alternatives. Two-dimensional simulations were used to determine the influence of technology and design parameter on device characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 357
Copyright
Copyright © Materials Research Society 1998

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References

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