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Optimization of the Ion-Cut Process in Si and SiC

Published online by Cambridge University Press:  17 March 2011

O. W. Holland ,
D. K. Thomas  and
R. B. Gregory
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048
D. K. Thomas
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048
R. B. Gregory
Affiliation:
Motorola Inc., Tempe, AZ 85284
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Abstract

H+-implantation is the basis for an ion-cut process, which combines hydrophilic wafer bonding, to produce heterostructures over a wide range of materials. This process has been successfully applied in Si to produce a commercial silicon-on-insulator material. The efficacy of implantation to produce thin-film separation was studied by investigation of H+-induced exfoliation in Si and SiC. Experiments were done to isolate the effects of the hydrogen chemistry from that of implant damage. Damage is manipulated independently of H+ dosage by a variety of techniques ranging from elevated temperature irradiation to a two-step implantation scheme in Si, and the use of channeled-ion implantation in SiC. The results will demonstrate that such schemes can significantly reduce the critical dose for exfoliation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.1
Copyright
Copyright © Materials Research Society 2001

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