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Organic-Inorganic Junctions formed on Porous Silicon: Isolation of a Surface Configuration primary to the Luminescence Mechanism.

Published online by Cambridge University Press:  28 February 2011

T. R. Cottrell
Affiliation:
Department of Chemical Engineering, Princeton University, Princeton, NJ 08544–5263
J. B. Benziger
Affiliation:
Department of Chemical Engineering, Princeton University, Princeton, NJ 08544–5263
J. C. Yee
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544–5263
J. K. M. Chunt
Affiliation:
Frick Chemical Laboratory, Princeton University, Princeton NJ, 08544–5236
A. B. Bocarslyt
Affiliation:
Frick Chemical Laboratory, Princeton University, Princeton NJ, 08544–5236
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Abstract

Organic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3–4 is a primary component in the luminescence mechanism of porous silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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