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Passivation of Ion-Beam-Induced Defects at and Around the Si-SiO2 Interface by Ion Beam Hydrogenation

Published online by Cambridge University Press:  26 February 2011

S. Kar ,
K. Srikanth  and
S. Ashok
S. Kar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology, Kanpur-208016, India
K. Srikanth
Affiliation:
Center for Electronic Materials & Processing, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Center for Electronic Materials & Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

Electronic defects were introduced at and around the Si-SiO2 interface by exposing thermally-oxidized silicon samples to a 16 keV Si ion beam in an ion implanter. The oxide thickness was 350 Å. Following Si self-implantation, hydrogenation was carried out at room temperature by a 400 eV hydrogen ion beam from a Kaufman source. Experimental results obtained from the admittance-voltage-frequency measurements of the metal-oxide-silicon structures indicated significant passivation of the ion-beam-induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1049
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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