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Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen

Published online by Cambridge University Press:  01 February 2011

J. R. Williams ,
T. Isaacs-Smith ,
S. Wang ,
C. Ahyi ,
R. M. Lawless ,
C.C. Tin ,
S. Dhar ,
A. Franceschetti ,
S.T. Pantelides  and
L.C. Feldman
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J. R. Williams
Affiliation:
Physics Department, Auburn University, AL, USA
T. Isaacs-Smith
Affiliation:
Physics Department, Auburn University, AL, USA
S. Wang
Affiliation:
Physics Department, Auburn University, AL, USA
C. Ahyi
Affiliation:
Physics Department, Auburn University, AL, USA
R. M. Lawless
Affiliation:
Physics Department, Auburn University, AL, USA
C.C. Tin
Affiliation:
Physics Department, Auburn University, AL, USA
S. Dhar
Affiliation:
Interdisciplinary Materials Science, Vanderbilt University, Nashville, TN, USA
A. Franceschetti
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
S.T. Pantelides
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
L.C. Feldman
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
G. Chung
Affiliation:
Dow Corning Corporation, Midland, MI, USA
M. Chisholm
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, USA
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Abstract

The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm−2eV−1 to about 6 × 1011 cm−2eV−1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11–20) 4H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E8.1
Copyright
Copyright © Materials Research Society 2004

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References

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