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Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

Published online by Cambridge University Press:  10 February 2011

I. Ferreira ,
H. Águas ,
L. Mendes ,
F. Fernandes ,
E. Fortunato  and
R. Martins
I. Ferreira
Affiliation:
CENIMAT, Faculty of Science and Technology, New University of Lisbon and CEMOP/UNINOVA, Quinta da Torre, 2825 Monte de Caparica, Portugal, rm@uninova.pt
H. Águas
Affiliation:
CENIMAT, Faculty of Science and Technology, New University of Lisbon and CEMOP/UNINOVA, Quinta da Torre, 2825 Monte de Caparica, Portugal, rm@uninova.pt
L. Mendes
Affiliation:
CENIMAT, Faculty of Science and Technology, New University of Lisbon and CEMOP/UNINOVA, Quinta da Torre, 2825 Monte de Caparica, Portugal, rm@uninova.pt
F. Fernandes
Affiliation:
CENIMAT, Faculty of Science and Technology, New University of Lisbon and CEMOP/UNINOVA, Quinta da Torre, 2825 Monte de Caparica, Portugal, rm@uninova.pt
E. Fortunato
Affiliation:
CENIMAT, Faculty of Science and Technology, New University of Lisbon and CEMOP/UNINOVA, Quinta da Torre, 2825 Monte de Caparica, Portugal, rm@uninova.pt
R. Martins
Affiliation:
CENIMAT, Faculty of Science and Technology, New University of Lisbon and CEMOP/UNINOVA, Quinta da Torre, 2825 Monte de Caparica, Portugal, rm@uninova.pt
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Abstract

This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 607
Copyright
Copyright © Materials Research Society 1998

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References

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