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Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

H. S. Venugopalan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
S. E. Mohney
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
B. P. Luther
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
J. M. DeLucca
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
S. D. Wolter
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
J. M. Redwing
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
G. E. Bulman
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
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Abstract

Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900 °C in N2, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni-Ga-N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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