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Phase Transformation and Microstructural Properties in Sputtered Vs. CVD WSi, Films

Published online by Cambridge University Press:  10 February 2011

A. Dornenicucci ,
C. Dehm ,
S. Loh ,
L. A. Clevenger ,
C. Dziobkowski ,
C. Cabral ,
C. Lavole  and
J. Jorden-Sweet
A. Dornenicucci
Affiliation:
IBM Microelectronics, Hopewell Jct., N.Y. 12533
C. Dehm
Affiliation:
Siemens AG, Hopewell Jct, N.Y. 12533
S. Loh
Affiliation:
IBM Microelectronics, Hopewell Jct., N.Y. 12533
L. A. Clevenger
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
C. Dziobkowski
Affiliation:
IBM Microelectronics, Hopewell Jct., N.Y. 12533
C. Cabral
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
C. Lavole
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
J. Jorden-Sweet
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

CVD WSi, films produced by dichlorosilane reduction at 570°C and WSi, films sputter deposited at 50°C were characterized by in situ x-ray diffraction (IS-XRD), in situ resistivity (ISRes), in situ stress (IS-stress), ex situ/in situ transmission electron microscopy (EX/IS-TEM) and ex situ Auger electron spectrometry (EX-AES) over the temperature range 25–1100°C. The CVD films were crystalline after deposition, with columnar grains in the hexagonal phase and a Si:W atomic ratio of 2.6:1. The CVD films exhibited a sharp hexagonal to tetragonal phase transformation near 750°C. The final grain size was greater than the film thickness, with no evidence of voiding. Avrami analyses gave traditional curves with n values of 2 for the phase transition in the CVD films. In comparison, the sputtered films were amorphous as deposited (Si:W atomic ratio of 2.8:1 ) and crystallized to a different hexagonal phase microstructure than did the CVD films. The sputtered films showed a broad hexagonal to tetragonal phase transformation near 800°C, and a final grain size that was less than the fihn thickness with much voiding. A low Avrami exponent of 0.2 to 0.4 was obtained for the transformation of the sputtered films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

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