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Photo-Chemical Changes of Aluminium Films on Silicon

Published online by Cambridge University Press:  21 February 2011

A. J. Kellock ,
J. S. Williams ,
G. L. Nyberg  and
J. Liesegang
A. J. Kellock
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3001, Australia
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT Melbourne 3001, Australia
G. L. Nyberg
Affiliation:
Research Centre for Electron Spectroscopy, LaTrobe University, Bundoora 3083, Australia
J. Liesegang
Affiliation:
Research Centre for Electron Spectroscopy, LaTrobe University, Bundoora 3083, Australia
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Abstract

X-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 127
Copyright
Copyright © Materials Research Society 1988

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