Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-12T11:06:25.980Z Has data issue: false hasContentIssue false
  • English
  • Français

The Photoconductivity Exponent For Recombination At Dangling Bonds In a-Si:H

Published online by Cambridge University Press:  28 February 2011

F. Vaillant  and
D. Jousse
F. Vaillant
Affiliation:
Centre National de la Recherche Scientifique, Laboratoire d'Etudes des Propriétés Electroniques des Solides, associated with ‘Université Scientifique, Technologique et Médicale de Grenoble’, B.P. 166, 38042 Grenoble Cedex, France
D. Jousse
Affiliation:
Centre National de la Recherche Scientifique, Laboratoire d'Etudes des Propriétés Electroniques des Solides, associated with ‘Université Scientifique, Technologique et Médicale de Grenoble’, B.P. 166, 38042 Grenoble Cedex, France
Get access

Abstract

A theoretical model has been developed for recombination at dangling bonds which explains the γ variations between 0.5 and 1 depending on the Fermi level position. The occupation probabilities of the T3+, T3° and T3- states under illumination have been calculated using the statistics of correlated levels. The γ exponent is derived through a parametric representation of the equations of detailed balance and charge conservation. A good agreement with experiment is obtained with a dangling bond density of 5×1015 cm-3, a placing of the T3° level at 0.95 eV below Ec, an effective correlation energy of 0.4 eV and a charged to neutral capture cross section ratio of 50.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 143
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fritzsche, H., J. of Non Cryst. Solids 77/78, 273 (1985).CrossRefGoogle Scholar
2. Okamoto, H. and Hamakawa, Y., Solid State Comm. 24, 23 (1977) L. Schweitzer, M. Grunewald and H. Dersch, J. de Physique (Paris) 42, C4–827 (1981).Google Scholar
3. Street, R.A., Appl. Phys. Lett. 41, 1060 (1982).Google Scholar
4. Dersch, H., Stuke, J. and Beichler, J., Phys. Stat. Sol. (b) 105, 265 (1981); W.B. Jackson, Solid State Commun. 44, 477 (1982).CrossRefGoogle Scholar
5. Anderson, D.A. and Spear, W.E., Phil. Mag. 36, 695 (1977).CrossRefGoogle Scholar
6. Jousse, D., Chaussat, C., Vaillant, F., Bruyère, J.C. and Lesimple, F., J. of Non Cryst. Solids 77/78, 627 (1985).Google Scholar
7. Spear, W.E., Steemers, H.L., Lecomber, P.G. and Gibson, R.A., Phil. Mag. B, 50, 133 (1984).Google Scholar