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Photocurrent Response In Mg-Doped GaN

Published online by Cambridge University Press:  10 February 2011

C. H. Qiu ,
J. I Pankove ,
I. Akasaki  and
H. Amano
C. H. Qiu
Affiliation:
Astralux, Inc., 2500 Central Ave., Boulder, CO 80301, chql@columbia.edu
J. I Pankove
Affiliation:
Astralux, Inc., 2500 Central Ave., Boulder, CO 80301, chql@columbia.edu
I. Akasaki
Affiliation:
Dept. of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
H. Amano
Affiliation:
Dept. of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
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Abstract

The photoconductivity response of Mg-doped GaN thin films was studied in the time domain of 50 nanoseconds to a few milliseconds in the temperature range of 100K to 390K. The response time, defined as the time when the photocurrent decreased to half its maximum value, is in the sub-microseconds at room temperature, but increased to a few microseconds at low temperatures. The contact capacitance is suspected for this behavior. Slower decay components due to trapping at defect states were also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 519
Copyright
Copyright © Materials Research Society 1998

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References

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