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The Photoemission from Superlattices of III-V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field
Published online by Cambridge University Press: 15 February 2011
Abstract
In this paper we have studied the photoemission from super-lattices of III-V semiconductors under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb super-lattice with graded interfaces as an example that the photoemission, increases with increasing electron concentration in an oscillatory way and increases with decreasing magnetic field in the magnetic quantum limit. Besides, the photoemission in superlattices is much greater than that of the constituent materials and the well-known results for wide-gap materials have also been obtained from our generalized analysis. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.
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- Copyright © Materials Research Society 1994
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