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Photo-Induced Excess Conductivity in Doping Modulated Amorphous Semiconductors

Published online by Cambridge University Press:  28 February 2011

J. Kakalios  and
H. Fritzsche
J. Kakalios
Affiliation:
The Department of Physics and the James Franck InstituteThe University of Chicago, Chicago, IL 60637
H. Fritzsche
Affiliation:
The Department of Physics and the James Franck InstituteThe University of Chicago, Chicago, IL 60637
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Abstract

The metastable excess conductivity σ(E) observed in hydrogenated amorphous silicon (a-Si:H), that is alternately doped n- and p- type, is compared with the Staebler-Wronski effect and other metastable conductivity changes observed in compensated a-Si:H and in oxidized p- type a-Si:H respectively. We find that Dohler's model of electron-hole pair separation in the pn-junction fields cannot account for the long life of a(E) near and above 300ºK. A defect complex associated with boron having a large configurational relaxation after releasing an electron by photoexcitation is considered as an explanation for σ(E).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 127
Copyright
Copyright © Materials Research Society 1985

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References

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