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Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen

Published online by Cambridge University Press:  01 February 2011

M. Capizzi ,
A. Polimeni ,
G. Baldassarri Högher von Höghersthal ,
M. Bissiri ,
A.Amore Bonapasta ,
F. Jiang ,
M. Stavola ,
M. Fischer ,
A. Forchel  and
I.K. Sou
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M. Capizzi
Affiliation:
INFM and Dipartimento di Fisica, Univ. di Roma, P.le A. Moro 2, I-00185 Roma, Italy
A. Polimeni
Affiliation:
INFM and Dipartimento di Fisica, Univ. di Roma, P.le A. Moro 2, I-00185 Roma, Italy
M. Bissiri
Affiliation:
INFM and Dipartimento di Fisica, Univ. di Roma, P.le A. Moro 2, I-00185 Roma, Italy
A.Amore Bonapasta
Affiliation:
ICMAT-CNR, Via Salaria Km 29,300 - C.P 10 - 00016 Monterotondo Stazione Roma, Italy
F. Jiang
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
M. Stavola
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
M. Fischer
Affiliation:
Universität Würzburg, Technische Physik, Am Hubland 97074 Würzburg, Germany
A. Forchel
Affiliation:
Universität Würzburg, Technische Physik, Am Hubland 97074 Würzburg, Germany
I.K. Sou
Affiliation:
Department of Physics, Hong Kong University, Kowloon, China
W.K. Ge
Affiliation:
Department of Physics, Hong Kong University, Kowloon, China
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Abstract

The effects of H irradiation and thermal annealing on the optical properties of (InGa)(AsN) heterostructures have been investigated by photoluminescence (PL) and infrared absorption, as well as by theoretical methods. It has been found that different N clusters contribute to the band gap red-shift reported for (InGa)(AsN) alloys, with a sizable localization of the carrier wavefunctions around N atoms. Infrared absorption measurements indicate that two different NH complexes are formed, whose vibrational frequencies are in good agreement with theoretical estimates. The ability of hydrogen to passivate different isoelectronic impurities is confirmed by PL results in H irradiated Zn(STe).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F9.4
Copyright
Copyright © Materials Research Society 2002

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