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Photoluminescence from freestanding GaN with (1010) orientation

Published online by Cambridge University Press:  01 February 2011

M. A. Reshchikov ,
A. Teke ,
H. P. Maruska ,
D. W. Hill  and
H. Morkoç
M. A. Reshchikov
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284
A. Teke
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284 Department of Physics, Balikesir University, 10100 Balikesir, Turkey
H. P. Maruska
Affiliation:
Crystal Photonics Inc., Sanford, FL 32773
D. W. Hill
Affiliation:
Crystal Photonics Inc., Sanford, FL 32773
H. Morkoç
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284
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Abstract

Freestanding GaN templates with (1010) orientation (M-plane) were obtained by halide vapor phase epitaxy (HVPE) on nearly lattice-matched LiAlO2 and subsequent removal of the substrate by wet chemical etching. Photoluminescence (PL) spectrum from both sides of the GaN template investigated is dominated by peaks at 3.47, 3.42 and 3.36 eV, tentatively attributed to an exciton bound to the neutral shallow donor and two unidentified structural defects, respectively. The quantum efficiency of the exciton-related emission exceeds 10%, whereas that of the combined emission from the defect-related bands (red, yellow and blue) is below 0.1%. The evolution of the PL spectrum with temperature and excitation intensity is analyzed in detail. Effects of polishing and etching on the PL properties are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.53
Copyright
Copyright © Materials Research Society 2004

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References

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