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Photoluminescence Mechanism of Silicon Quantum Dots and Wells

Published online by Cambridge University Press:  15 February 2011

Y. Kanemitsu  and
S. Okamoto
Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Okamoto
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Abstract

We discuss the mechanism of efficient photoluminescence (PL) from Si quantum dots and wells. Luminescence properties of SiO2-capped Si nanocrystals are different from those of H-terminated Si nanocrystals, but are very similar to those of Si quantum wells sandwiched by SiO2 layers. The size-dependence of PL properties and resonantly excited PL spectra of SiCb-capped Si dots and wells indicate that excitons are localized near the interface between the crystalline Si core and surface oxide layer, and the strong coupling of electronic and vibrational excitations causes the broad PL spectrum. The exciton localization plays an essential role in the efficient luminescence process in nanoscale Si/SiO2 systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 195
Copyright
Copyright © Materials Research Society 1997

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References

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