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Photoluminescence Study of Thermally Treated Silicon Crystals

Published online by Cambridge University Press:  15 February 2011

J. Weber  and
R. Sauer
J. Weber
Affiliation:
Physikalisches Institut (Teil 4), Universität Stuttgart Pfaffenwaldring 57 - D 7000 Stuttgart 80, F.R. Germany
R. Sauer
Affiliation:
Physikalisches Institut (Teil 4), Universität Stuttgart Pfaffenwaldring 57 - D 7000 Stuttgart 80, F.R. Germany
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Abstract

Cz silicon samples heated to 450 ° C or higher temperatures for several hours exhibit many sharp photoluminescence lines well below the band edge. We study the production of the lines in terms of carbon and oxygen doping and of the heating temperature and duration. First results as to a level scheme of the P (0.7672 eV) line are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 165
Copyright
Copyright © Materials Research Society 1982

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References

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