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Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

Published online by Cambridge University Press:  28 February 2011

X. Yin ,
Fred H. Pollak ,
B.T. McDermott ,
K.G. Reid  and
S.M. Bedair
X. Yin
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210
Fred H. Pollak
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210
B.T. McDermott
Affiliation:
Electrical Engineering Department, North Carolina State University, Raleigh, NC 27695
K.G. Reid
Affiliation:
Electrical Engineering Department, North Carolina State University, Raleigh, NC 27695
S.M. Bedair
Affiliation:
Electrical Engineering Department, North Carolina State University, Raleigh, NC 27695
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Abstract

We have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 679
Copyright
Copyright © Materials Research Society 1990

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References

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