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Photo-stimulated Rebuilding of Structure in Semiconductors

Published online by Cambridge University Press:  21 March 2011

S. S. Rashidova ,
B. L. Oksengendler ,
N. N. Turaeva  and
I. M. Aripov
S. S. Rashidova
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
B. L. Oksengendler
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
N. N. Turaeva
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
I. M. Aripov
Affiliation:
Institute of Polymer Chemistry and Physics, Uzbekistan
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Abstract

A strong electron-phonon interaction observed in semiconductors allows to realize a special kind of atomic rebuilding under photo-irradiation of the medium. We consider three types of defective structures: one atomic, two-atomic (“dump-bell”) and multi-atomic (kinks) defects. It is shown that an inversion effect of the defect potential term may be realized if there are non-equivalent neighboring positions of one-atomic and two-atomic defects. In this case the photo-excitation of electronic subsystems of these defects leads to an inversion of potential terms and a consecutive athermal rebuilding of the defective structures. The Yahn-Teller effect and psevdo-effect play a special role here. It is shown for kink-structures that the photo-excitation of the electronic subsystems results in the alteration of kink nonius and the successive exponentially strong decrease of an activation barrier. Especially effects of athermal atomic rebuilding of U-negative defects are considerable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.11.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Deep centers in semiconductors/Ed. by Pantelides, S., N.Y. Pl.Press, 1986, 950 pp.Google Scholar
2. Yunusov, M.S., Oksengendler, B.L. et.al., Subthreshold radiation effects in semiconductors, Tashkent:Phan, 1989, 224 p.Google Scholar
3. Weiser, K., Phys.Rew.,1962, v.126, ?4, p.1427–1436.Google Scholar
4. Toyazawa, Y. Self-trapping and defect reactions // J.Semicond. and Insulat., 1983, vol.5, p.175–200.Google Scholar
5. Davidov, A.S., Theory of solid states, ?oscow:Nauka, 1976, 639 p.Google Scholar
6. Toyozawa, Y., A proposed model of excitonic mechanism for defect formation in Acali Halides// J.Phys.Sol.Jap., 1978, vol.44, ?3, p.482–488.Google Scholar
7. Idenbom, V.L., Frenkel-Kontorova's model with accounting the discrete structure of lattice, Kristallografia, 1957, v.3, p.197–209.Google Scholar
8. Seger, ?., Shiller, P., Dislocation bends and their influence on inner friction in crystals, in: Defect influence on solid states properties / Ed. by Mezon, W., v.3, chapter 8, Moscow:Mir, 1969.Google Scholar