Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T08:32:22.567Z Has data issue: false hasContentIssue false
  • English
  • Français

Physical Characteristics of Very Low Temperature Anodic Oxides of Polycrystalline Si Films

Published online by Cambridge University Press:  10 February 2011

H. Plantier ,
J. Pelletier ,
R. A. B. Devine  and
G. Vincent
H. Plantier
Affiliation:
Laboratoire d'Electrostatique et de Matériaux Diélectriques, LEMD, CNRS-UJF, UMR C5517, BP 166, 38042 GrenobleFrance France Telecom, CNET, BP98, 38243 Meylan, France
J. Pelletier
Affiliation:
Laboratoire d'Electrostatique et de Matériaux Diélectriques, LEMD, CNRS-UJF, UMR C5517, BP 166, 38042 GrenobleFrance
R. A. B. Devine
Affiliation:
France Telecom, CNET, BP98, 38243 Meylan, France
G. Vincent
Affiliation:
UFR Physique, Université de Grenoble, F38041 Grenoble, France
Get access

Abstract

Controlled oxidation of polycrystalline and single crystal silicon has been carried out at temperatures < 100 °C using microwave excited, plasma assisted anodisation. Oxide thicknesses up to 30 nm have been obtained in times ∼ 15 minutes. The growth kinetics are similar for both types of Si. The results of infrared absorption measurements clearly indicate that the anodic oxides have a network structure significantly different to that of high temperature, thermally grown oxides and this is partly due to ultra-violet radiation present in the plasma during growth. Electrical measurements (CV, IV) are underway on simple MOS capacitors. The results indicate that the plasma oxides have acceptable levels of fixed oxide charge but that the breakdown electric fields are presently low. Preliminary data suggests that these very low temperature oxides are suitable for TFT applications though some technical problems need to be addressed. Given these reservations the processing of large area flat panel displays using this type of plasma assisted oxidation is perfectly feasible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 363
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Martinet, C., Devine, R. A. B. and Brunel, M., J. Appl. Phys. 81, 6996 (1997)Google Scholar
[2] Peeters, J. and Li, L., J. Appl. Phys. 72, 719 (1992)Google Scholar
[3] Irene, E. A., Massoud, H. Z. and Tierney, E., J. Electrochem.Soc. 133, 1253 (1986)Google Scholar
[4] Lewis, E. A. and Irene, E. A., J. Electrochem.Soc. 134, 2332 (1987)Google Scholar
[5] Takahashi, H. and Kojima, Y., Appl. Phys. Lett. 64, 2273 (1994)Google Scholar
[6] Boyd, I. W. and J. Wilson, I. B., Appl. Phys. Lett. 50, 320 (1987)Google Scholar
[7] Lehmann, A., Shumann, L. and Hübner, K., Phys. Stat. Sol., 117, 689 (1983)Google Scholar
[8] Martinet, C. and Devine, R. A. B., J. Appl. Phys. 77, 4343 (1995)Google Scholar
[9] Devine, R. A. B., J. Non-Cryst. Solids, 152, 50 (1993)Google Scholar
[10] Mozzi, R. L. and Warren, B. E., J. Appl. Cryst. 2, 164 (1969)Google Scholar
[11] Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (Wiley - Interscience 1936), p 362 Google Scholar