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Physical Model and Numerical Results of Dissociation Kinetics of Hydrogen-Passivated Si/SiO2 Interface Defects

Published online by Cambridge University Press:  10 February 2011

G. V. Gadiyak
G. V. Gadiyak*
Affiliation:
Institute of Computational Technologies, Russian Academy of Sciences Siberian, Division, Novosibirsk, 630090, RussiaTel: +7-(3832) 35–02–80, Fax: +7-(3832) 35–12–42, E-mail: Gadiyak@adm.ict.nsk.su
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Abstract

A simple model of thermal dissociation and recovery of hydrogen-passivated silicon defects at the Si/SiO2 interface, such as Pb - centers, during vacuum thermal annealing has been suggested. This model considers reactions of hydrogen with defect states at the Si/SiO2 interface and diffusion of liberated atomic and molecular hydrogen in a silicon dioxide film. An excellent agreement was obtained between the experimental and numerical simulation results for oxides with different thickness (200–1024 Å), grown both (111) and (100) samples and annealed in the temperature range (480–700° C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 71
Copyright
Copyright © Materials Research Society 1998

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References

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