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Plasma Diagnostics and Modeling of TI/TIN Reactive Sputtering

Published online by Cambridge University Press:  25 February 2011

W. Tsai ,
J. Fair ,
D. Hoddl  and
Edward L. Ginzton
W. Tsai
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
J. Fair
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
D. Hoddl
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
Edward L. Ginzton
Affiliation:
Research Center, Varian Associates Palo Alto, CA 94303
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Abstract

In situ optical emission spectroscopy studies of Ti/TiN reactive sputtering were carried out in a Varian M2000 cluster tool. Deposition rates of Ti/TiN films at 4.3 mTorr are directly proportional to ratio of Ti(365)/Ar(435) emission lines. Measurement of the ratio of the N(655)/Ar(435) emission lines indicates an incubative dependence on.nitrogen flow due to nitridation of the target. TiN reactive sputtering is accurately described by a mathematical model based on the nitrogen flux balance on target and wall/shield at steady state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 793
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Sundgren, J. E., Thin Solid Films, 128, 21 (1985).CrossRefGoogle Scholar
2. Ellwanger, R. C. and Towner, J. M., in “Tungsten and Other Refractory Metals for VLSI Applications II”, Broadbent, E. K., Editor, p. 283, Materials Research Society, Pittsburgh, PA (1987).Google Scholar
3. Fair, J. A. and Delfino, M., Appl. Surf. Sci. 53, 206 (1991).Google Scholar
4. Berg, S., Blom, H. O., Larsson, T. and Nender, C., J. Vac. Sci. Technol., A5(2), 202 (1987).Google Scholar
5. Sigmund, P., Phys. Rev. 184, 383 (1969).Google Scholar
6. Schwarz, S. A. and Helms, C. R., J. Appl. Phys. 50, 5492 (1979).Google Scholar
7. Hara, D. J., J. Vac. Sci. Technol., 13, 471 (1976).CrossRefGoogle Scholar
8. Fromm, E. and Mayer, O., Surf. Sci., 74, 259 (1978).Google Scholar
9. Shih, H. D., Jona, F., Jepsen, D. W. and Marcus, P. M., Surf. Sci., 60, 445 (1976).Google Scholar
10. Delfino, M., (private communication).Google Scholar
11. Peebles, D. E. and Pope, L. E., Thin Solid Films, 173, 19 (1989).CrossRefGoogle Scholar
12. McDonald, N. R. and Wallwork, G. R., Oxidation of Metals, 2, 263 (1970)CrossRefGoogle Scholar