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Plasma Enhanced Liquid Source-Cvd Of Ta2O5 using penta Ethoxy tantalum source and its characteristics

Published online by Cambridge University Press:  15 February 2011

P. A. Murawala ,
M. Sawai ,
T. Tatsuta ,
O. Tsuji ,
Sz. Fujita  and
Sg. Fujita
P. A. Murawala
Affiliation:
Research & Development Center, Samco International Incorporated, 33, ‘Tanaanamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
M. Sawai
Affiliation:
Research & Development Center, Samco International Incorporated, 33, ‘Tanaanamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
T. Tatsuta
Affiliation:
Research & Development Center, Samco International Incorporated, 33, ‘Tanaanamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
O. Tsuji
Affiliation:
Research & Development Center, Samco International Incorporated, 33, ‘Tanaanamiya-Cho, Takeda, Fushimi-ku, Kyoto 612, Japan
Sz. Fujita
Affiliation:
Department. of Electrical Engineering, Kyoto University, Kyoto 606, Japan
Sg. Fujita
Affiliation:
Department. of Electrical Engineering, Kyoto University, Kyoto 606, Japan
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Abstract

We rerxprt on plasma enhanced, liquid source, chemical vapor deposition (LS-CVD) of tantalunm penta oxide (Ta2 O5) material using a penta ethoxy tantalum [Ta(OC2H5)5] liquid source. We have investigated several basic plasma deposition conditions such as - dependence of deposition rate and refractive index on the source tank temperature, carrier gas N2 flow rate, reactive gas O2 flow rate anid substrate temperature. Structural properties investigated by θ-2θ x-ray measurements showed amorphous nature of the films and Auger electron spectrosopy indicated carbon-contamination free growth of Ta2O5 films having proper stoichiometry (Ta/O = 0.4). In addition to this we have also performed electrical measurements on Au/Ta2O5 /Si MOS structure which exhibit very well defined C-V characteristics with flat band voltage as tow as +0.3V, low leakage current and high breakdown voltages. As a hitherto unreported step in Ta2O5 processing we also performed rapid thermal. Annealing at 700°C and 900°C for 5 minutes which showed much improved electrical properties. All results suggest growth of high quality Ta2O5 films from a carbon-basud Ta liquid source, due to an effect of plasma enhanced deposition process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 319
Copyright
Copyright © Materials Research Society 1992

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References

REFRENCES

1. Shinriki, H., Nishioka, Y., Ohji, Y. and Mukai, K. IEEE Transaction on Electron Devices 36(2), pp 328–332, 1989.CrossRefGoogle Scholar
2. Saitoh, M., Mori, T. and Tamura, IEDM–86, IEEE, pp 680–683, (1986).Google Scholar
3. Yamagishi, K. and Tarui, Y. J.J. A. P., 25(4), pp. L306–L308, (1986).Google Scholar
4. TRI Chemical Laboratory Inc., Japan.Google Scholar
5. Matsui, M., Oka, S., Yamagishi, K., Kuroiwa, K. and Tarui, Y., J.J.A.P. 27(4) pp. 506–511, (1988).CrossRefGoogle Scholar
6. Tervaninthorn, U., Miyahara, Y. and Morizumi, T. J.J.A.P., 26(3), pp.347–351, (1987).Google Scholar
7. Watanabe, I. and Yoshihara, H. J.J.A.P. 24(6), pp.L411–L413, (1985).CrossRefGoogle Scholar
8. Plasma deposited thin film by Mort, J. and Jansen, F., CRC Press (1986).Google Scholar
9. Shinriki, H., Hiratani, N., Nakao, A. and Tachi, S., Proc. Int. Conf. SSDM, Yokohama, pp. 198–200, (1991).Google Scholar
10. Tanimoto, S., Matsui, M., Aoyagi, N., Kamisako, K., K-Kuroiwa, K. and Tarui, Y., Proc. Int. Conf.SSDM, Sendai, pp L195–L198, (1990).Google Scholar