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Plasma-Assisted Epitaxial Growth of GaAs on SI

Published online by Cambridge University Press:  26 February 2011

Qing Zhu Gao ,
Takashi Hariu  and
Shoichi Ono
Qing Zhu Gao
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980, Japan
Takashi Hariu
Affiliation:
Department of Electronic Engineering, Tohoku University, Sendai 980, Japan
Shoichi Ono
Affiliation:
Research Institute of electrical Communication, Tohoku University, Sendai 980, Japan
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Abstract

Low temperature cleaning process of Si surface and the subsequent epitaxial growth of GaAs on Si by Plasma-Assisted Epitaxy in hydrogen plasma are described. As the rf power applied to excite the plasma is increased, the temperature for both cleaning and epitaxial growth processes can be reduced. Then GaAs epitaxial layers were directly grown on Si at 440°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 303
Copyright
Copyright © Materials Research Society 1989

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References

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