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Plastic Deformation of Thin Foil Substrates with Amorphous Silicon Islands into Spherical Shapes

Published online by Cambridge University Press:  14 March 2011

Pai-hui I. Hsu
Affiliation:
Center for Photonics and Optoelectronic Materials (POEM)Princeton University Princeton, NJ 08544, U.S.A.
Min Huang
Affiliation:
Center for Photonics and Optoelectronic Materials (POEM)Princeton University Princeton, NJ 08544, U.S.A.
Sigurd Wagner
Affiliation:
Center for Photonics and Optoelectronic Materials (POEM)Princeton University Princeton, NJ 08544, U.S.A.
Zhigang Suo
Affiliation:
Center for Photonics and Optoelectronic Materials (POEM)Princeton University Princeton, NJ 08544, U.S.A.
J. C. Sturm
Affiliation:
Center for Photonics and Optoelectronic Materials (POEM)Princeton University Princeton, NJ 08544, U.S.A.
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Abstract

There is a growing interest in the application of large area electronics on curved surfaces. One approach towards realizing this goal is to fabricate circuits on planar substrates of thin plastic or metal foil, which are subsequently deformed into arbitrary shapes. The problem that we consider here is the deformation of substrates into a spherical shape, where the strain is determined by geometry and cannot be reduced by simply using a thinner substrate. The goal is to achieve permanent, plastic deformation in the substrates, without exceeding fracture or buckling limits in the device materials.

Our experiments consist of the planar fabrication of amorphous silicon device structures onto stainless steel or Kapton® polyimide substrates, followed by permanent deformation into a spherical shape. We will present empirical experiments showing the dependence of the results on the island/line size of the device materials and the deformation temperature. We have successfully deformed Kapton® polyimide substrates with 100 [.proportional]m wide amorphous silicon islands into a one steradian spherical cap, which subtends 66 degrees, without degradation of the silicon. This work demonstrates the feasibility of building semiconductor devices on plastically deformed substrates despite a 5% average biaxial strain in the substrate after deformation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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