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Platelet Inversion Domains Induced by Mg-doping in ELOG AlGaN Films

Published online by Cambridge University Press:  01 February 2011

R. Liu ,
F. A. Ponce ,
D. Cherns ,
H. H. Wills ,
H. Amano  and
I. Akasaki
R. Liu
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
F. A. Ponce
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
D. Cherns
Affiliation:
Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
H. H. Wills
Affiliation:
Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
H. Amano
Affiliation:
Department of Materials Science and Engineering, Meijo University, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Materials Science and Engineering, Meijo University, Nagoya 468, Japan
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Abstract

We have studied the microstructure of heavily Mg-doped Al0.03Ga0.97N films grown by metal-organic vapor phase epitaxy in the lateral overgrowth mode (ELOG). A new type of defects with a platelet shape has been observed. According to TEM analysis, these defects are embedded in the overgrowth regions. The platelet is normal to the ELOG stripe direction [1100]AIGaN, forming trapezoidal trenches on the film surface. The thickness of the platelet is about 100nm. We have identified these defects as inversion domains using convergent beam electron diffraction and HR-TEM. Mg segregation at the coalescence boundaries between ELOG islands is believed to result in the formation of the defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.21
Copyright
Copyright © Materials Research Society 2004

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References

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