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Pore Formation and Propagation Mechanism in Porus Silicon

Published online by Cambridge University Press:  15 February 2011

V. Lehmann ,
H. Cerva  and
U. Gosele
V. Lehmann
Affiliation:
Siemens Research Labs. 8000 Munich 83, Otto-Hahn-Ring, Germany
H. Cerva
Affiliation:
Siemens Research Labs. 8000 Munich 83, Otto-Hahn-Ring, Germany
U. Gosele
Affiliation:
School of Engineering, Duke University, Durham, NC 27706, USA
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Abstract

This paper presents a model of the microporous silicon formation process which is based on hole depletion due to quantum confinement in the porous structure. This model is compared with the formation of larger porous structures (meso-, macroporous) where hole depletion is generated by a space charge region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 3
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

(1) Beale, M.I.J., Benjamin, J.D., Uren, M.J., Chew, N.G., Cullis, A.G., J.Cryst.Growth 73, (1985), 622 CrossRefGoogle Scholar
(2) Zhang, X.G., Collins, S.D., Smith, R.L., J.Electrochem.Soc. 136 (1989), 1561 Google Scholar
(3) Bsiesy, A., Ronga, I., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Halimaoui, A., Electrochem.Soc.;Proc. 4.Symp. SO Techn.and Dev.(1990) Austin,Texas, USA Google Scholar
(4) Lehmann, V., H.F611, J.Electrochem.Soc. 137 (1990), 653 Google Scholar
(5) Lehmann, V., U.G6sele, Appl. Phys. Lett. 58 (1991), 856 Google Scholar
(6) Lehmann, V., U.G6sele, U.S. Patent Appl. No. 07/751,800Google Scholar
(7) Pickering, C., Beale, M.I.J., Robbins, D.J., Pearson, P.J., Greef, R., J.Phys.C: Solid State Phys. 17, (1984), 6535 CrossRefGoogle Scholar
(8) Canham, L.T., Appl. Phys. Lett. 57 (1990), 1046 CrossRefGoogle Scholar
(9) Halimaoui, A., Oules, C., Bomchil, G., Appl..Phys. Lett. 59 (1991), 304 Google Scholar
(10) Lehmann, V., H.F611, J. Electrochem. Soc. 135 (1988), 2831 CrossRefGoogle Scholar
(11) Lehmann, V., to be published.Google Scholar