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Position-Sensitive Atom Probe and Stem Analysis of the Microchemistry of GaInAs/Inp Quantum Wells

Published online by Cambridge University Press:  25 February 2011

J. Alex Liddle ,
N.J. Long ,
A.G. Norman ,
A. Cerezo  and
C.R.M. Grovenor
J. Alex Liddle
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, U.K.
N.J. Long
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, U.K.
A.G. Norman
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, U.K.
A. Cerezo
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, U.K.
C.R.M. Grovenor
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, U.K.
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Abstract

The recently developed techniques of pulsed laser atom probe microanalysis (PLAP) and position sensitive atom probe (POSAP) have been applied to the study of quantum well interfaces in samples that have also been well characterised by the more conventional techniques of TEM and STEM. These techniques have the potential for providing chemical information with a spatial resolution of better than 2nm, but the atom probe has the ability to independently resolve morphological and microchemical features of interfaces in three dimensions.

This paper presents results taken from GaInAs/lnP MOCVD-grown samples, comparing information on well composition, and on the chemical abruptness and morphological roughness of interfaces using complementary analysis techniques. We have concentrated on obtaining reliable quantitative data on the phosphorous content of the GaInAs wells and on the gallium and arsenic contents of the InP barrier layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 377
Copyright
Copyright © Materials Research Society 1989

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References

[1] Jiang, H.X. and Lin, J.Y., J. Appl. Phys. 61, 624 (1987).Google Scholar
[2] Ogale, S.B., Madhukar, A. and Cho, N.M., J. Appl. Phys. 63, 578 (1988).CrossRefGoogle Scholar
[3] Long, N.J., Proceedings of the VIth Microscopy of Semiconducting Materials meeting, Oxford, 10th-13th April (1989). (to be published Inst. Phys. Conf. Ser.)Google Scholar
[4] Kellogg, G.L. and Tsong, T.T., J. Appl. Phys. 51, 1184 (1980).CrossRefGoogle Scholar
[5] Cerezo, A., Godfrey, T.J. and Smith, G.D.W., Rev. Sci. Instrum. 56, 862 (1988).Google Scholar
[6] Liddle, J.A., Norman, A.G., Cerezo, A. and Grovenor, C.R.M., J. de Phys. Coll. 49, C6–509 (1988)Google Scholar